Parameters |
Mfr |
Infineon Technologies |
Series |
OptiMOS™ |
Package |
Tube |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
6.3mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id |
2V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs |
22 nC @ 5 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
2800 pF @ 15 V |
FET Feature |
- |
Power Dissipation (Max) |
94W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
PG-TO251-3 |
Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
Base Product Number |
IPU06N |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1,500 |
N-Channel 30 V 50A (Tc) 94W (Tc) Through Hole PG-TO251-3