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Infineon Technologies IPW50R190CEFKSA1

IPW50R190CEFKSA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IPW50R190CEFKSA1
  • Price:
  • Datasheet: PDF
  • Description: IPW50R190CEFKSA1(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 190mOhm @ 6.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 510µA
Gate Charge (Qg) (Max) @ Vgs 47.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1137 pF @ 100 V
FET Feature -
Power Dissipation (Max) 127W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-1
Package / Case TO-247-3
Base Product Number IPW50R
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 240
N-Channel 500 V 18.5A (Tc) 127W (Tc) Through Hole PG-TO247-3-1