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Infineon Technologies IPW80R360P7XKSA1

IPW80R360P7XKSA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IPW80R360P7XKSA1
  • Price: $3.75
  • Datasheet: PDF
  • Description: IPW80R360P7XKSA1(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 500 V
FET Feature -
Power Dissipation (Max) 84W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
Base Product Number IPW80R360
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
N-Channel 800 V 13A (Tc) 84W (Tc) Through Hole PG-TO247-3-41