Parameters |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
103A (Tc) |
Rds On (Max) @ Id, Vgs |
11.6mOhm @ 62A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
150 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds |
5380 pF @ 25 V |
FET Feature |
- |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-TO263-3 |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Base Product Number |
IRF3610 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
800 |
N-Channel 100 V 103A (Tc) Surface Mount PG-TO263-3