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Infineon Technologies IRF3709STRR

IRF3709STRR


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IRF3709STRR
  • Price:
  • Datasheet: PDF
  • Description: IRF3709STRR(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2672 pF @ 16 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 800
N-Channel 30 V 90A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount D2PAK