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Infineon Technologies IRF6645TR1PBF
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta), 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.7A, 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ SJ |
| Package / Case | DirectFET™ Isometric SJ |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1,000 |
N-Channel 100 V 5.7A (Ta), 25A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SJ
