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Infineon Technologies IRF7106
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| Parameters | |
|---|---|
| HTSUS | 8541.29.0095 |
| Standard Package | 95 |
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tube |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2.5A |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 15V |
| Power - Max | 2W |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | IRF71 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
Mosfet Array 20V 3A, 2.5A 2W Surface Mount 8-SO
