Parameters |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tube |
Product Status |
Discontinued at Digi-Key |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
8A |
Rds On (Max) @ Id, Vgs |
17.8mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id |
4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
1330pF @ 30V |
Power - Max |
2W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SO |
Base Product Number |
IRF7351PBF |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
SP001570426 |
Standard Package |
95 |
Mosfet Array 60V 8A 2W Surface Mount 8-SO