Parameters | |
---|---|
Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Tube |
Product Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12 V |
Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 24mOhm @ 8.7A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 1877 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Base Product Number | IRF7433 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | SP001571932 |
Standard Package | 95 |