Parameters |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tube |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
12.5mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
23 nC @ 4.5 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
2100 pF @ 15 V |
FET Feature |
- |
Power Dissipation (Max) |
2.5W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-SO |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
*IRF7466 |
Standard Package |
95 |
N-Channel 30 V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO