Parameters |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tube |
Product Status |
Obsolete |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 P-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
4.7A |
Rds On (Max) @ Id, Vgs |
30mOhm @ 4.7A, 4.5V |
Vgs(th) (Max) @ Id |
1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
39nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds |
1700pF @ 15V |
Power - Max |
1W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package |
8-TSSOP |
Base Product Number |
IRF7750 |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
100 |
Mosfet Array 20V 4.7A 1W Surface Mount 8-TSSOP