Parameters |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tube |
Product Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
6.8A (Tc) |
Rds On (Max) @ Id, Vgs |
480mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
27 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds |
350 pF @ 25 V |
FET Feature |
- |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220AB |
Package / Case |
TO-220-3 |
Base Product Number |
IRF9520 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
50 |
P-Channel 100 V 6.8A (Tc) Through Hole TO-220AB