Parameters |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
49A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 10V |
Rds On (Max) @ Id, Vgs |
0.95mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id |
1.1V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs |
230 nC @ 4.5 V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
10890 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
3.6W (Ta), 156W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-PQFN (5x6) |
Package / Case |
8-PowerVDFN |
Base Product Number |
IRFH6200 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
4,000 |
N-Channel 20 V 49A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)