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Infineon Technologies IRFP4368PBF

IRFP4368PBF


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IRFP4368PBF
  • Price: $8.58
  • Datasheet: PDF
  • Description: IRFP4368PBF(Kg)
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Details

Tags

Parameters
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.85mOhm @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 570 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 19230 pF @ 50 V
FET Feature -
Power Dissipation (Max) 520W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number IRFP4368
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001556774
Standard Package 25
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Active
N-Channel 75 V 195A (Tc) 520W (Tc) Through Hole TO-247AC