Parameters |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tube |
Product Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
5.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
500mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
12 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
270 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
2.5W (Ta), 25W (Tc) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D-Pak |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Base Product Number |
IRFR9014 |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
75 |
P-Channel 60 V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak