Parameters |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tube |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
75 V |
Current - Continuous Drain (Id) @ 25°C |
120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
5.8mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id |
4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs |
110 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
4750 pF @ 50 V |
FET Feature |
- |
Power Dissipation (Max) |
230W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-262 |
Package / Case |
TO-262-3 Long Leads, I²Pak, TO-262AA |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
50 |
N-Channel 75 V 120A (Tc) 230W (Tc) Through Hole TO-262