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Infineon Technologies IRFU4105PBF

IRFU4105PBF


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IRFU4105PBF
  • Price:
  • Datasheet: PDF
  • Description: IRFU4105PBF(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251AA)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 75
N-Channel 55 V 27A (Tc) 68W (Tc) Through Hole IPAK (TO-251AA)