Parameters |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tube |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Continuous Drain (Id) @ 25°C |
185A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
4mOhm @ 110A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
140 nC @ 4.5 V |
Vgs (Max) |
±16V |
Input Capacitance (Ciss) (Max) @ Vds |
7660 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
300W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
SUPER-220™ (TO-273AA) |
Package / Case |
TO-273AA |
Base Product Number |
IRLBA130 |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
*IRLBA1304 |
Standard Package |
50 |
N-Channel 40 V 185A (Tc) 300W (Tc) Through Hole SUPER-220™ (TO-273AA)