Parameters |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tape & Reel (TR) |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
31mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
26 nC @ 4.5 V |
Vgs (Max) |
±16V |
Input Capacitance (Ciss) (Max) @ Vds |
870 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
68W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D-Pak |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
SP001577002 |
Standard Package |
3,000 |
N-Channel 30 V 35A (Tc) 68W (Tc) Surface Mount D-Pak