Parameters |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tube |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
55 V |
Current - Continuous Drain (Id) @ 25°C |
42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
8mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
66 nC @ 5 V |
Vgs (Max) |
±16V |
Input Capacitance (Ciss) (Max) @ Vds |
2900 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
130W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D-Pak |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
75 |
N-Channel 55 V 42A (Tc) 130W (Tc) Surface Mount D-Pak