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Infineon Technologies SPB21N50C3ATMA1

SPB21N50C3ATMA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: SPB21N50C3ATMA1
  • Price: $4.96
  • Datasheet: PDF
  • Description: SPB21N50C3ATMA1(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series CoolMOS™
Package Tape & Reel (TR)
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SPB21N50
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
N-Channel 560 V 21A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2