Parameters |
Mfr |
Infineon Technologies |
Series |
CoolMOS™ |
Package |
Tape & Reel (TR) |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
650 V |
Current - Continuous Drain (Id) @ 25°C |
800mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
6Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id |
3.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
5 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
100 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
11W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-TO252-3-11 |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Base Product Number |
SPD01N |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
2,500 |
N-Channel 650 V 800mA (Tc) 11W (Tc) Surface Mount PG-TO252-3-11