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Infineon Technologies SPP02N80C3XKSA1

SPP02N80C3XKSA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: SPP02N80C3XKSA1
  • Price:
  • Datasheet: PDF
  • Description: SPP02N80C3XKSA1(Kg)
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Details

Tags

Parameters
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.7Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 100 V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number SPP02N
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 500
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
N-Channel 800 V 2A (Tc) 42W (Tc) Through Hole PG-TO220-3