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Intel LD2114AL4
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| Parameters | |
|---|---|
| Mfr | Intel |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 4Kbit |
| Memory Organization | 1K x 4 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 200ns |
| Access Time | 200 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 18-CDIP |
| Supplier Device Package | 18-CDIP |
| RoHS Status | Not applicable |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
SRAM - Asynchronous Memory IC 4Kbit Parallel 200 ns 18-CDIP
