Parameters |
Mfr |
ISSI, Integrated Silicon Solution Inc |
Series |
Automotive, AEC-Q100 |
Package |
Bulk |
Product Status |
Active |
Memory Type |
Volatile |
Memory Format |
DRAM |
Technology |
SDRAM - DDR4 |
Memory Size |
8Gbit |
Memory Organization |
512M x 16 |
Memory Interface |
Parallel |
Clock Frequency |
1.2 GHz |
Write Cycle Time - Word, Page |
15ns |
Access Time |
18 ns |
Voltage - Supply |
1.14V ~ 1.26V |
Operating Temperature |
-40°C ~ 105°C (TC) |
Mounting Type |
Surface Mount |
Package / Case |
96-TFBGA |
Supplier Device Package |
96-TWBGA (10x14) |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Other Names |
706-IS46QR16512A-083TBLA2 |
Standard Package |
136 |
SDRAM - DDR4 Memory IC 8Gbit Parallel 1.2 GHz 18 ns 96-TWBGA (10x14)