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ISSI, Integrated Silicon Solution Inc IS61WV51216EEBLL-10B2LI
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| Parameters | |
|---|---|
| Mfr | ISSI, Integrated Silicon Solution Inc |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 8Mbit |
| Memory Organization | 512K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 10ns |
| Access Time | 10 ns |
| Voltage - Supply | 2.4V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-TFBGA (6x8) |
| Base Product Number | IS61WV51216 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 480 |
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 48-TFBGA (6x8)
