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IXYS DCG45X1200NA
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| Parameters | |
|---|---|
| Mfr | IXYS |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Diode Configuration | 2 Independent |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 22A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227B |
| Base Product Number | DCG45 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Standard Package | 10 |
Diode Array 2 Independent 1200 V 22A Chassis Mount SOT-227-4, miniBLOC
