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IXYS IXFB70N60Q2
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| Parameters | |
|---|---|
| Mfr | IXYS |
| Series | HiPerFET™, Q2 Class |
| Package | Tube |
| Product Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 265 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PLUS264™ |
| Package / Case | TO-264-3, TO-264AA |
| Base Product Number | IXFB70 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 25 |
N-Channel 600 V 70A (Tc) 890W (Tc) Through Hole PLUS264™
