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IXYS IXFH24N50

IXFH24N50


  • Manufacturer: Chilisin Electronics
  • Chip 1 Group NO: IXFH24N50
  • Price:
  • Datasheet: PDF
  • Description: IXFH24N50(Kg)
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Details

Tags

Parameters
Mfr IXYS
Series HiPerFET™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
Base Product Number IXFH24
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IXFH24N50-NDR
Standard Package 30
N-Channel 500 V 24A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)