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IXYS IXFH6N120P

IXFH6N120P


  • Manufacturer: Chilisin Electronics
  • Chip 1 Group NO: IXFH6N120P
  • Price: $12.02
  • Datasheet: PDF
  • Description: IXFH6N120P(Kg)
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Details

Tags

Parameters
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2830 pF @ 25 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
Base Product Number IXFH6
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
N-Channel 1200 V 6A (Tc) 250W (Tc) Through Hole TO-247AD (IXFH)