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IXYS IXFH96N20P

IXFH96N20P


  • Manufacturer: Chilisin Electronics
  • Chip 1 Group NO: IXFH96N20P
  • Price: $10.01
  • Datasheet: PDF
  • Description: IXFH96N20P(Kg)
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Details

Tags

Parameters
Mfr IXYS
Series HiPerFET™, Polar
Package Box
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V
FET Feature -
Power Dissipation (Max) 600W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
Base Product Number IXFH96
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -IXFH96N20P
Standard Package 30
N-Channel 200 V 96A (Tc) 600W (Tc) Through Hole TO-247AD (IXFH)