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IXYS IXFJ80N25X3

IXFJ80N25X3


  • Manufacturer: Chilisin Electronics
  • Chip 1 Group NO: IXFJ80N25X3
  • Price: $13.30
  • Datasheet: PDF
  • Description: IXFJ80N25X3(Kg)
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Details

Tags

Parameters
Base Product Number IXFJ80
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -IXFJ80N25X3
Standard Package 30
Mfr IXYS
Series HiPerFET™, Ultra X3
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5430 pF @ 25 V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISO TO-247-3
Package / Case TO-247-3
N-Channel 250 V 44A (Tc) 104W (Tc) Through Hole ISO TO-247-3