Parameters |
Mfr |
IXYS |
Series |
HiPerFET™ |
Package |
Tube |
Product Status |
Not For New Designs |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200 V |
Current - Continuous Drain (Id) @ 25°C |
180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
10mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id |
4V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs |
660 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
22000 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
700W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Chassis Mount |
Supplier Device Package |
SOT-227B |
Package / Case |
SOT-227-4, miniBLOC |
Base Product Number |
IXFN180 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
Not Applicable |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
IXFN180N20-NDR |
Standard Package |
10 |
N-Channel 200 V 180A (Tc) 700W (Tc) Chassis Mount SOT-227B