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IXYS IXFT36N60P

IXFT36N60P


  • Manufacturer: Chilisin Electronics
  • Chip 1 Group NO: IXFT36N60P
  • Price: $10.96
  • Datasheet: PDF
  • Description: IXFT36N60P(Kg)
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Details

Tags

Parameters
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 25 V
FET Feature -
Power Dissipation (Max) 650W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number IXFT36
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
N-Channel 600 V 36A (Tc) 650W (Tc) Surface Mount TO-268AA