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IXYS IXFV18N60P

IXFV18N60P


  • Manufacturer: Chilisin Electronics
  • Chip 1 Group NO: IXFV18N60P
  • Price:
  • Datasheet: PDF
  • Description: IXFV18N60P(Kg)
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Details

Tags

Parameters
Mfr IXYS
Series HiPerFET™, PolarHT™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS220
Package / Case TO-220-3, Short Tab
Base Product Number IXFV18
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 600 V 18A (Tc) 360W (Tc) Through Hole PLUS220