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IXYS IXKF40N60SCD1
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| Parameters | |
|---|---|
| Mfr | IXYS |
| Series | CoolMOS™ |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Base Product Number | IXKF40 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 25 |
N-Channel 600 V 41A (Tc) Through Hole ISOPLUS i4-PAC™
