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IXYS IXTP75N10P

IXTP75N10P


  • Manufacturer: Chilisin Electronics
  • Chip 1 Group NO: IXTP75N10P
  • Price: $4.97
  • Datasheet: PDF
  • Description: IXTP75N10P(Kg)
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Details

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Parameters
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 25 V
FET Feature -
Power Dissipation (Max) 360W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXTP75
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -IXTP75N10P
Standard Package 50
Mfr IXYS
Series Polar
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
N-Channel 100 V 75A (Tc) 360W (Tc) Through Hole TO-220-3