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IXYS IXTQ180N085T

IXTQ180N085T


  • Manufacturer: Chilisin Electronics
  • Chip 1 Group NO: IXTQ180N085T
  • Price:
  • Datasheet: PDF
  • Description: IXTQ180N085T(Kg)
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Details

Tags

Parameters
Mfr IXYS
Series TrenchMV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 430W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number IXTQ180
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
N-Channel 85 V 180A (Tc) 430W (Tc) Through Hole TO-3P