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IXYS MMIX1F180N25T

MMIX1F180N25T


  • Manufacturer: Chilisin Electronics
  • Chip 1 Group NO: MMIX1F180N25T
  • Price: $49.06
  • Datasheet: PDF
  • Description: MMIX1F180N25T(Kg)
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Details

Tags

Parameters
Mfr IXYS
Series GigaMOS™, HiPerFET™, TrenchT2™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 132A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 364 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23800 pF @ 25 V
FET Feature -
Power Dissipation (Max) 570W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 24-SMPD
Package / Case 24-PowerSMD, 21 Leads
Base Product Number MMIX1F180
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -MMIX1F180N25T
Standard Package 20
N-Channel 250 V 132A (Tc) 570W (Tc) Surface Mount 24-SMPD