Parameters |
Mfr |
IXYS |
Series |
GigaMOS™, HiPerFET™, TrenchT2™ |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
250 V |
Current - Continuous Drain (Id) @ 25°C |
132A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
13mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id |
5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs |
364 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
23800 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
570W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
24-SMPD |
Package / Case |
24-PowerSMD, 21 Leads |
Base Product Number |
MMIX1F180 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
-MMIX1F180N25T |
Standard Package |
20 |
N-Channel 250 V 132A (Tc) 570W (Tc) Surface Mount 24-SMPD