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Microchip Technology LP0701N3-G
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| Parameters | |
|---|---|
| Mfr | Microchip Technology |
| Series | - |
| Package | Bag |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 16.5 V |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 2V, 5V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 300mA, 5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Base Product Number | LP0701N3 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1,000 |
P-Channel 16.5 V 500mA (Tj) 1W (Tc) Through Hole TO-92
