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Micron Technology Inc. 29C4G48MAZBAAKS-5 E WT
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
| Standard Package | 1,000 |
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Memory Type | Non-Volatile, Volatile |
| Memory Format | FLASH, RAM |
| Technology | FLASH - NAND, Mobile LPDRAM |
| Memory Size | 4Gbit (NAND), 2Gbit (LPDRAM) |
| Memory Organization | 256M x 16 (NAND), 128M x 16 (LPDRAM) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 137-VFBGA |
| Supplier Device Package | 137-VFBGA (13x10.5) |
| Base Product Number | MT29C4G48 |
FLASH - NAND, Mobile LPDRAM Memory IC 4Gbit (NAND), 2Gbit (LPDRAM) Parallel 200 MHz 137-VFBGA (13x10.5)
