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Micron Technology Inc. 29F256G08EBCAGB16A3WC1-M

MT29F256G08EBCAGB16A3WC1-M


  • Manufacturer: NJR Corporation/NJRC
  • Chip 1 Group NO: 29F256G08EBCAGB16A3WC1-M
  • Price:
  • Datasheet: -
  • Description: MT29F256G08EBCAGB16A3WC1-M(Kg)
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Details

Tags

Parameters
Mfr Micron Technology Inc.
Series -
Package Bulk
Product Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (TLC)
Memory Size 256Gbit
Memory Organization 32G x 8
Memory Interface Parallel
Clock Frequency 333 MHz
Write Cycle Time - Word, Page -
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Base Product Number MT29F256G08
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
HTSUS 0000.00.0000
Standard Package 1
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 333 MHz Die