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Micron Technology Inc. 29F512G08EBHAFB17A3WC1-FES

MT29F512G08EBHAFB17A3WC1-FES


  • Manufacturer: NJR Corporation/NJRC
  • Chip 1 Group NO: 29F512G08EBHAFB17A3WC1-FES
  • Price:
  • Datasheet: -
  • Description: MT29F512G08EBHAFB17A3WC1-FES(Kg)
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Details

Tags

Parameters
Mfr Micron Technology Inc.
Series -
Package Bulk
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (TLC)
Memory Size 512Gbit
Memory Organization 64G x 8
Memory Interface Parallel
Write Cycle Time - Word, Page -
Voltage - Supply 2.5V ~ 3.6V
Operating Temperature 0°C ~ 70°C
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Base Product Number MT29F512G08
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN OBSOLETE
Standard Package 1
FLASH - NAND (TLC) Memory IC 512Gbit Parallel Die