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Micron Technology Inc. 41K512M8V00HWC1-N001
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| Parameters | |
|---|---|
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Base Product Number | MT41K512M8 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8542.32.0036 |
| Standard Package | 1 |
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
SDRAM - DDR3L Memory IC 4Gbit Parallel
