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Micron Technology Inc. 53B128M32D1Z00NEC2
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| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4 |
| Memory Size | 4Gbit |
| Memory Organization | 128M x 32 |
| Memory Interface | - |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.1V |
| Operating Temperature | -30°C ~ 85°C (TC) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Base Product Number | MT53B128 |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| HTSUS | 0000.00.0000 |
| Standard Package | 1 |
SDRAM - Mobile LPDDR4 Memory IC 4Gbit
