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Micron Technology Inc. 53B256M64D2NV MS TR
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| Parameters | |
|---|---|
| Memory Organization | 256M x 64 |
| Memory Interface | - |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.1V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Base Product Number | MT53B256 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN | OBSOLETE |
| HTSUS | 0000.00.0000 |
| Standard Package | 2,000 |
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4 |
| Memory Size | 16Gbit |
SDRAM - Mobile LPDDR4 Memory IC 16Gbit
