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Micron Technology Inc. 53E128M16D1DS-053 IT:A
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| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4 |
| Memory Size | 2Gbit |
| Memory Organization | 128M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 1.866 GHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.06V ~ 1.17V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 200-WFBGA |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Base Product Number | MT53E128 |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN | OBSOLETE |
| Other Names | 557-MT53E128M16D1DS-053IT:A |
| Standard Package | 1,360 |
SDRAM - Mobile LPDDR4 Memory IC 2Gbit Parallel 1.866 GHz 200-WFBGA (10x14.5)
