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Micron Technology Inc. 53E256M16D1DS-046 WT:B TR
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| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4 |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | - |
| Clock Frequency | 2.133 GHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.1V |
| Operating Temperature | -30°C ~ 85°C (TC) |
| Base Product Number | MT53E256 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0036 |
| Other Names | MT53E256M16D1DS-046WT:BTR |
| Standard Package | 2,000 |
SDRAM - Mobile LPDDR4 Memory IC 4Gbit 2.133 GHz
