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Micron Technology Inc. 53E512M16D1Z11MWC1
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| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Box |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 8Gbit |
| Memory Organization | 512M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Wafer |
| Other Names | 557-MT53E512M16D1Z11MWC1 |
| Standard Package | 1 |
SDRAM - Mobile LPDDR4X Memory IC 8Gbit Parallel 3.5 ns Wafer
