Parameters |
Memory Interface |
HSTL |
Clock Frequency |
167 MHz |
Write Cycle Time - Word, Page |
- |
Access Time |
2.5 ns |
Voltage - Supply |
2.4V ~ 2.6V |
Operating Temperature |
0°C ~ 70°C (TA) |
Mounting Type |
Surface Mount |
Package / Case |
165-TBGA |
Supplier Device Package |
165-FBGA (13x15) |
RoHS Status |
Not applicable |
Moisture Sensitivity Level (MSL) |
4 (72 Hours) |
REACH Status |
Vendor Undefined |
ECCN |
3A991B2A |
HTSUS |
8542.32.0041 |
Standard Package |
1 |
Mfr |
Micron Technology Inc. |
Series |
QDR™ |
Package |
Bulk |
Product Status |
Active |
Memory Type |
Volatile |
Memory Format |
SRAM |
Technology |
SRAM - Synchronous |
Memory Size |
9Mbit |
Memory Organization |
512K x 18 |
SRAM - Synchronous Memory IC 9Mbit HSTL 167 MHz 2.5 ns 165-FBGA (13x15)